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Temperature dependence of discoloration in wafer-type ceramic (Si substrate)

Plasma treatment while heating at 400℃! Trends in color difference between Ar plasma and O2 plasma.

We would like to introduce the temperature dependence of discoloration in wafer-type ceramic types (Si substrate) technical data. When the "PLAZMARK" wafer-type ceramic type was heated to 400°C and subjected to plasma treatment, a tendency for the color difference to decrease was observed with Ar plasma, while a tendency for the color difference to increase was observed with O2 plasma. Although there is a temperature dependence of discoloration, it has been confirmed that it can still be used as an indicator at 400°C. 【Overview of Ar/O2 Plasma Treatment】 ■ Method: CCP (RF) ■ Initial Vacuum Level: 5.0×10^-4 Pa ■ RF Power: 50 W ■ Gas Flow Rate: 40 sccm ■ Treatment Gas Pressure: 10 Pa ■ Treatment Time: 10 minutes *For more details, please refer to the related links or feel free to contact us. *The first image is from Ar plasma treatment, and the second image is from O2 plasma treatment.